PART |
Description |
Maker |
WF128K64-XG4WX5 WF128K64-XG4W5 WF128K64-120G4WI5 W |
90ns; 5V power supply; 128K x 64 flash module 150ns; 5V power supply; 128K x 64 flash module 128Kx64 5V Flash Module(128Kx64,5V闪速存储器模块) Flash MCP 120ns; 5V power supply; 128K x 64 flash module
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White Electronic Designs Corporation
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WMS128K8-17FEM WMS128K8-17FM WMS128K8-55CLC WMS128 |
55ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 17ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 15ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 x8 SRAM x8的SRAM 25ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 20ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
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White Electronic Designs Microchip Technology, Inc. Sharp, Corp. Electronic Theatre Controls, Inc. Raltron Electronics, Corp.
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IS61LV12824-8TQ IS61LV12824 IS61LV12824-10B IS61LV |
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K的24 HIGH-SPEED的CMOS静态RAM.3V电源 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 8 ns, PQFP100 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 8 ns, PBGA119 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 10 ns, PBGA119 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 10 ns, PQFP100
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天津新技术产业园区管理委员会 Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution Inc
|
WMF128K8-120DEM5 WMF128K8-120FEM5 WMF128K8-120FFC5 |
150ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690 120ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690 EEPROM EEPROM EEPROM|FLASH|128KX8|CMOS|DIP|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS |双酯| 32脚|陶瓷 EEPROM|FLASH|128KX8|CMOS|LLCC|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS | LLCC | 32脚|陶瓷 EEPROM|FLASH|128KX8|CMOS|FP|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS |计划生育| 32脚|陶瓷 EEPROM|FLASH|128KX8|CMOS|SOJ|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS | SOJ | 32脚|陶瓷 EEPROM|FLASH|128KX8|CMOS|SOP|32PIN|CERAMIC 60ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690 70ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690 90ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690
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White Electronic Designs Mosel Vitelic, Corp. International Rectifier, Corp. TE Connectivity, Ltd. KODENSHI, CORP. Microchip Technology, Inc. Century Container
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BAP816 |
Dioda uniwersalna Non-Volatile Static RAM (nvSRAM); Organization: 32x8; Density: 256KB; Speed: 25ns; Supply Voltage: 5V; Temperature Range: 0° to 70°C
|
Ultra CEMI
|
W24L01S-70LE W24L01S-70LI W24L01S-70LL W24L01B-55L |
SUBMINIATURE POWER RELAY 128K X 8 CMOS STATIC RAM 128K X 8 STANDARD SRAM, 70 ns, PDSO32
|
WINBOND[Winbond] Winbond Electronics Corp Winbond Electronics, Corp.
|
5962-88724013X 5962-88724043X 5962-87539053X 5962- |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to 7.0V; V power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
|
Atmel
|
GS840E36AGT-180I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8 ns, PQFP100
|
GSI Technology, Inc.
|
IS61C1024 IS61C1024-12H IS61C1024-12HI IS61C1024-1 |
RES POWER .050 OHM 2W 1% SMT 128K X 8 STANDARD SRAM, 15 ns, PDSO32 128K x 8 HIGH-SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 20 ns, PDSO32 128K x 8 HIGH-SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 25 ns, PDSO32 128K x 8 HIGH-SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32 IC-1MB FAST SRAM 128K X 8 STANDARD SRAM, 15 ns, PDIP32 RES POWER .030 OHM 2W 5% SMT RES POWER .020 OHM 2W 5% SMT
|
Integrated Silicon Solution, Inc. ETC[ETC] Integrated Silicon Solution Inc
|
ASM809TEUR-T ASM810TEUR ASM810SEUR ASM810REUR ASM8 |
4.00 V, 3 pin microcontroller power supply supervisor 4 V, 3 pin microcontroller power supply supervisor 2.93 V, 3 pin microcontroller power supply supervisor 3.08 V, 3 pin microcontroller power supply supervisor 2.63 V, 3 pin microcontroller power supply supervisor 4.38 V, 3 pin microcontroller power supply supervisor 4.63 V, 3 pin microcontroller power supply supervisor 3 Pin Microcontroller Power Supply Supervisor 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3 Low Power CPU Supervisors
|
Alliance Semiconductor, Corp. ALSC Alliance Semiconductor Corporation Alliance Semiconductor Corp...
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LH532000B LH532000BT |
CMOS 2M (256K x 8/128K x 16) MROM 200万的CMOS56 × 8/128K × 16MROM LH532000BT CMOS 1M (128K x 8) Mask Programmable ROM 48-pin TSOP
|
Sharp, Corp. Sharp Corporation Sharp Electrionic Components Sharp Electronics Corp.
|
28C011TRT1FS 28C011TRPFS 28C011TRPFS-20 28C011TRPF |
1 Megabit (128K x 8-Bit) EEPROM 1兆位128K的8位)的EEPROM 1 Megabit (128K x 8-Bit) EEPROM 1兆位28K的8位)的EEPROM 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32 CONNECTOR ACCESSORY POT 100K OHM THUMBWHEEL CERM ST
|
http:// NXP Semiconductors N.V. Maxwell Technologies, Inc
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